|Title:||Professor, Associate Chair for Graduate Studies|
|Dept:||Electrical and Computer Engineering|
Durgamadhab (Durga) Misra is a Professor in the Department of Electrical and Computer Engineering at New Jersey Institute of Technology, Newark, USA. His current research interests are in the areas of nanoelectronic/optoelectronic devices and circuits; especially in the area of nanometer CMOS gate stacks and device reliability. He is a Fellow of the Electrochemical Society (ECS) and served in the ECS Board as a Board Member (2008-10). He received the Thomas Collinan Award from the Dielectric Science & Technology Division of ECS. He is also the winner of the Electronic and Photonic Division Award from ECS. Misra received several research grants from the National Science Foundation, NASA, State of New Jersey and various Industries.
He is currently a Distinguished Lecturer of IEEE Electron Devices Society (EDS) and serving in the IEE EDS Board of Governors. He has organized many IEEE International Conferences on Solid-State Science and Technology field and at the Technical Meetings of the Electrochemical Society as General Chair, Program Chair and Track Chair, Technical Program Committee member. He edited and co-edited more than 40 books and conference proceedings in his field of research.
He has published more than 85 technical articles in peer reviewed Journals and more than 160 articles in International Conference proceedings including 90 Invited Talks. He has graduated 17 PhD students and 35 MS students. Misra received NJIT´s Excellence in Teaching Award in September 2005 for demonstrating excellence in the classroom and for encouraging and guiding students to work at their highest academic level. He has mentored many students through his participation in NJIT´s McNair Scholarship Program and has also participated in the Partners in Learning Program at NJIT, in which faculty constructively evaluate other instructors in the classroom.
He received the M.S. and Ph.D. degrees in electrical engineering from the University of Waterloo, Waterloo, ON, Canada, in 1985 and 1988, respectively.
VLSI DEVICES & PROCESSING
The current research topics are in the area of Reliability of High-K Dielectrics in nanoscale CMOS Devices. Reliability enhancement work is done by deuterium implantation before gate oxide is grown. This involves extensive device characterization such as gate oxide reliability, hot electron effect, interface states and low temperature characterization.
Electrical characteristics of thermally evaporated hafnium oxide is currently being studied
The VLSI Design research includes (i) A Synthesizable VHDL Model of the Exact Solution for Three Dimensional Hyperbolic Positioning Syste; (ii) On-Chip Implementation of Deadlock Avoidance in Wormhole Networks; and Transceiver design for sensors network.
The other current topic is characterization and modeling of Three N-Type Implant Pinned Buried Photodetector using Charge Transfer Model for Ultra High Frame Rate Burst Image Sensors.
Remote monitoring of chemical sensors using local transceivers.
Physics and Technology of High-k Gate Dielectrics 4 ECS Transactions Vol. 3 No. 3, 2006, Pennington, NJ
Science and Technology of Dielectrics for Active and Passive Photonic Devices ECS Transactions Vol. 3 No. 11, 2006, Pennington, NJ
Dielectrics for Nanosystems II: Materials Science, Processing, Reliability, and Manufacturing ECS Transactions Vol. 2 No. 1, 2006, Pennington, NJ
Physics and Technology of High-k Gate Dielectrics III ECS Transactions Vol. 1 No. 5, 2006, Pennington, NJ
Physics and Chemistry of SiO2 and Si-SiO2 Interface-5 ECS Transactions Vol. 1 No. 1, 2005, Pennington, NJ
Dielectrics in Emerging Technologies PV 2003-01, Pennington, NJ
Physics and Technology of High-K Gate Dielectrics - I PV 2002-28, Pennington, NJ
High-k Gate Dielectrics
D. Misra, H. Iwai and H. Wong, Interface, vol. 14, No. 2, pp. 30-34, 2005.
Electrical Techniques for the Characterization of Dielectric Films
T. Kundu, R. Garg, N.A. Chowdhury and D. Misra, Interface, vol. 14, No. 3, pp. 17-19, 2005.
Role of Hydrogen in Ge/HfO2/Al Gate Stacks Subjected to Negative Bias Temperature Instability
N. Rahim and D. Misra, Applied Physics Letters, vol. 92, 023511, 2008.
Charge Trapping at Deep States in Hf-Silicate Based High-k Gate Dielectrics
N.A. Chowdhury and D. Misra, Journal of Electrochemical Society, vol. 154, No. 2, pp. G30-G37, 2007.
Trapping in Deep Defects under Substrate Hot Electron Stress in TiN/Hf-Silicate Based Gate Stacks
N.A. Chowdhury, P. Srinivasan and D. Misra, Solid-State Electronics, vol. 51, No. 1, pp. 80-88, 2007.
Effect of Ge Surface Nitridation on the Ge/HfO2/Al MOS Devices
Reenu Garg, D. Misra and S. Guha, IEEE Transaction on Device and Materials Reliability, vol. 6, No. 3, pp. 455-460, 2006.
Effect of Nitridation on Low-Frequency (1/f) Noise in n- and p-MOSFETS with HFO2 Gate Dielectrics
P. Srinivasan, E. Simoen, Z.M. Rittersma, W. Deweerd, L. Pantisano, C. Claeys, and D. Misra, Journal of Electrochemical Society, vol. 153, No. 9, pp. G819-G825, 2006.
Impact of the Interfacial Layer on the Low-Frequency Noise (1/f) Behavior of MOSFETs With Advanced Gate Stacks
F. Crupi, P. Srinivasan, P. Magnone, E. Simoen, C. Pace, D. Misra, and C. Claeys, IEEE Electron Device Letters, vol. 27, No. 8, pp. 688-691, 2006.
Enhanced SiO2 Reliability on Deuterium-Implanted Silicon
T. Kundu and D. Misra, IEEE Transactions on Device and Materials Reliability, vol. 6, No. 2, pp. 288-291, 2006.
Gate Electrode Effects on low-frequency (1/f) noise in p-MOSFETs with high-k dielectrics
P. Srinivasan, E. Simoen, R. Singanamalla, H.Y. Yu, C. Claeys, and D. Misra, Journal of Electrochemical Society, vol. 50, No. 6, pp. 992-998, 2006.
Low-Frequency (1/f) Noise Performance of n- and p-MOSFETs with Poly-Si/Hf-Based Gate Dielectrics
P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, and D. Misra, Journal of Electrochemical Society, vol. 153, No. 4, pp. G324-G329, 2006.
Ge MOS Capacitors with Thermally Evaporated HfO2 as Gate Dielectric
R. Garg, D. Misra and P.K. Swain, Journal of Electrochemical Society vol. 153, No. 2, pp. F29-F34, 2006.
Charge Trapping in Ultrathin Hafnium Silicate/Metal Gate Stacks
P. Srinivasan, N.A. Chowdhury and D. Misra, IEEE Electron Device Letters, vol. 26, No. 12, pp. 913-915, 2005.
A Generalized Electron Transport Model in Photodetectors for High-Speed Imaging
T. Kundu and D. Misra, Semiconductor Science and Technology, vol. 20, pp. 1122-1126, 2005.
Impact of High-k Gate Stack Material with Metal Gates on LF Noise in n- and p-MOSFETs
P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, and D. Misra, Miroelectronic Engineering, vol. 80, pp. 226-229, 2005.
Si-SiO2 Interface Passivation Using Hydrogen and Deuterium Implantation
T. Kundu, and D. Misra, Electrochemical and Solid-State Letters, vol. 8, No. 2, pp. G35-G37, 2005.
Charge Trapping and Interface Characteristics of Thermally Evaporated HfO2
N. A. Chowdhury, R. Garg, and D. Misra, Applied Physics Letters, vol. 85, No. 15, pp. 3289-3291, 2004.
Electrical Characteristics of Thermally Evaporated HfO2
R. Garg, N. A. Chowdhury, M. Bhaskaran, P. K. Swain and D. Misra, Journal of Electrochemical Society, vol. 151, No. 10, 2004.
Screening of Si-H Bonds during Plasma Processing
P. Srinivasan, B. Vootukuru, and D. Misra, Solid State Electronics, vol. 48, No. 10-11, pp. 1809-1814, 2004.
Thermally Evaporated ZrO2
M. Bhaskaran, P.K. Swain and D. Misra, Electrochemical and Solid-State Letters, vol. 7, No. 6, pp. F38-F40, 2004.
Interface Hardening with Deuterium Implantation
D. Misra and R.K. Jarwal, Journal of Electrochemical Society, vol. 149, No. 8, pp. G446-G450, August 2002.
Effect of Reverse Biased Voltage at Source and Drain on Plasma Damage
D. Misra, IEEE Transactionon Electron Devices, vol. 49, No. 6, pp. 1090-1093, June 2002.
Reliability of Thin Oxides Grown on Deuterium Implanted Silicon Substrate
R.K. Jarwal and D. Misra, IEEE Transactionon Electron Devices, vol. 48, No. 5, pp. 1015-1016, May 2001.
Charge Transfer in a Multi-Implant Pinned-Buried Photodetector
R.K. Jarwal and D. Misra, IEEE Transactionon Electron Devices, vol. 48, No. 5, pp. 858-862, May 2001.
Metal-oxide-silicon diodes on deuterium-implanted silicon substrate
D. Misra and R.K. Jarwal, Applied Physics Letters, vol. 76, No. 21, pp. 3076-3078, May 2000.
Gate Oxides Grown on Deuterium-Implanted Silicon Substrate
D. Misra and S. Kishore, IEEE/ECS Electrochemical and Solid-State Letters, vol. 2, No. 12, pp. 637-639, December 1999.
Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate
D. Misra, Applied Physics Letters, vol. 75, No. 15, pp. 2283-2285, October 1999.
Plasma Process-Induced Band Gap Modifications of Strained SiGe Heterostructure
P.K. Swain, S. Madapur, and D. Misra Applied Physics Letters, vol. 74, No. 21, pp. 3173-3175, May 1999.
Plasma Damage Immunity of Thin Gate Oxide Grown on Very Lightly N Implanted Silicon
K.P.Cheung, D. Misra, J. I. Colonell, C-T. Liu, Y. Ma, C-P. Chang, W-Y-C. Lai, R. Liu and C-S. Pai, IEEE Electron Device Letters, vol. 19, no. 7, pp. 231, 1998.