Nguyen, Hieu Pham Trung

Title: Assistant Professor
Email: hieu.p.nguyen@njit.edu
Office: 305 ECEC
Phone: 973-596-3523
Dept: Electrical and Computer Engineering
Webpage: https://web.njit.edu/~hpnguyen

About Me

Hieu P. T. Nguyen received the B.S. degree in Physics from Vietnam National University in Ho Chi Minh City, Vietnam (2005), the M.S. degree in Electronics Engineering from Ajou University, South Korea (2009), and the PhD. degree in Electrical Engineering from McGill University, Canada (2012). In September 2014, he joined the Electrical and Computer Engineering Department, New Jersey Institute of Technology. He has authored/co-authored 1 book chapter, 1 patent, 48 journal articles, and more than 70 conference presentations.


He is the founder and director of the molecular beam epitaxy facility at NJIT. His current research interests focus on developing high-performance nanophotonic devices using nanostructures and their applications in a variety of areas, including light emitting diodes, lasers, and solar cells, as well as in water-splitting, hydrogen generation, and carbon dioxide reduction. He aims to apply his research to develop highly efficient solid-state lighting, digital displays, electronic textiles, water purification systems, solar cells, as well as to devise storable and renewable source of clean energy.
 

Education

  • McGill University, PhD., 2012
  • ​Ajou University, M.S., 2009
  • Vietnam National University (HCMC), B.S., 2005

Service

Editorial board:

Journal of Materials Science Research

Session co-chair:

Annual World Congress of Smart Materials (2015)

Joint Workshop on LEDs for Life Science and Bio-Agriculture 2015

Reviewer:

Nano Letters, Nature Scientific Reports, Nanotechnology, Optics Express, Optics Letters, Journal of Physics D: Applied Physics, Semiconductor Science and Technology, Applied Optics, ACS Books, ACS Nano, Vacuum, Journal of the American Chemical Society, Journal of Display Technology, Journal of Materials Science in Semiconducting Processing, Journal of Materials Science Research, Applied Physics Letters, IEEE Photonic Technology Letters, Material Chemistry Physics, Nanoscales, Material and Design, Review in Physics, Materials Science in Semiconductor Processing, Advanced Electronic Materials, Applied Physics A

Website: https://web.njit.edu/~hpnguyen

Research

• Semiconductor nanostructures for nanoelectronics and optoelectronics

• Epitaxial growth and characterization of III-nitride nanostructures

• III-V based materials and devices

• Light emitting diodes, laser diodes, photodetectors

• Solar fuels, solar cells
 

1. Book Chapter

Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Axial GaN nanowire-based light emitting diodes,” chapter in Wide band gap semiconductor nanowires for optical devices, edited by V. Consonni and G. Feuillet, Hermes Science Publishing, Published online on August 08, 2014 

 

2. Refereed and Archival Journal Articles:

2016

K. Q. Le, H. P.T. Nguyen, Q. M. Ngo, A. Canimoglu, Nurdogan Can, “Experimental and numerical optical characterization of Plasmonic Copper Nanoparticles Embedded in ZnO Fabricated by Ion Implantation and Annealing”, Journal of Alloys and Compounds, 669 (2016) 246 (IF = 2.999)
R. Wang, Y. H. Ra, Y. Wu, S. Zhao, H. P. T Nguyen, I. Shih, Z. Mi, “Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire”, SPIE OPTO, 97481S-97481S-9
K. Q. Le, J. Bai, H.P.T. Nguyen, “Fano-induced spontaneous emission enhancement of molecule placed in a cluster of asymmetrically-arranged metallic nanoparticles”, Journal of Luminescence, 173 (2016) 199 (IF = 2.719)

2015

S. Zhao, H. P. T. Nguyen, M. G. Kibria, and Z. Mi, "III-nitride nanowire Optoelectronics", Progress in Quantum Electronics, 44 (2015) 14 (IF=3.778)

S. Sadaf, Y. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, "Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes", Nano Letters, 15 (2015) 6696  (IF = 13.025)
S. Woo, M. Bugnet, H. P. T. Nguyen, Z. Mi, A. G. Botton, “Atomic Ordering in InGaN alloys within Nanowire Heterostructures”, Nano Letters, 15 (2015) 6413 (IF = 13.025)
S. Woo, N. Gauquelin, H. P. T. Nguyen, Z. Mi, and G. A. Botton,"Interplay of Strain and Indium Incorporation in InGaN/GaN Dot-in-a-Wire Nanostructures by Scanning Transmission Electron Microscopy", Nanotechnology 24 (2015) 344002 (IF = 3.842) 
Invited: H. P. T. Nguyen, and Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects”, ECS Transactions  66 (2015) 213
H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes”, Proc. SPIE 9383 (2015) 9383007
G. Sun, R. Chen, Y. Ding, H. P. T. Nguyen, and Z. Mi, "InGaN/GaN dot-in-a-wire: Ultimate terahertz nanoemitters", Laser and Photonics Reviews 9 (2015) 105 (IF = 7.976)
H. P. T. Nguyen, M. Djavid, S. Woo, X. Liu, A. T. Connie, S. Sadaf, Q. Wang, G. Botton, I. Shih, and Z. Mi, “Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers”, Nature Scientific Reports 5 (2015) 7744 (IF = 5.774)
K. H. Li, Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy”, Physics Status Solidi A doi: 10.1002/pssa.201431726

2014

R. Wang, H. P. T. Nguyen, A. T. Connie, I. Shih, and Z. Mi, "Color-Tunable, Phosphor-Free InGaN Nanowire Light-Emitting Diode Arrays Monolithically Integrated on Silicon", Optics Express 22 (2014) A1768 (IF=3.488)
A. F. Jason, H. P. T. Nguyen, Z. Mi; R. Leonelli, L. Stafford, "Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N2 plasma", Nanotechnology 25 (2014) 435606 (IF = 3.842) 

Before September 2014:

Q. Wang, X. Liu, M. G. Kibria, H. P. T. Nguyen, S. Zhao, K. H. Li, Z. Mi, "P-type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed micro-Raman scattering and X-ray photoelectron spectrocopy", Nanoscale 6 (2014) 9970 (IF = 7.394) 
M. Djavid, H. P. T. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, "Tunnel injection InGaN/GaN dot-in-a-wire white-light emitting diodes", Semiconductor Science and Technology 29 (2014) 085009 (IF=2.190)
S. Zhang, A. T. Connie, D. A. Laleyan, H. P. T. Nguyen, Q. Wang, J. Song, I. Shih, and Z. Mi, "On the carrier injection efficiency and thermal properties of InGaN/GaN axial nanowire light emitting diodes", Journal of Quantum Electronics 50 (2014) 483. (IF=1.887)
M. G. Kibria, S. Zhao, F. A. Chowdhury, Q. Wang, H. P. T. Nguyen, M. L. Trudeau, H. Guo, and Z. Mi, "Ultrahigh efficiency spontaneous overall water splitting on p-type GaN nanowires", Nature Communications 5 (2014) 3825. (IF=11.474)
Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, " High Power phosphor-free InGaN/GaN/AlGaN core-shell nanowire white light emitting diodes on Si substrates", ECS Transactions 61 (2014) 9.
Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes", SPIE Proceeding 9003 (2014) 900306.
A. T. Connie, H. P. T. Nguyen, S. M. Sadaf, I. Shih, and Z. Mi, " Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy", Journal of Vacuum Science & Technology B 32 (2014) 02C113.
H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates”, Journal of Electronic Materials 43 (2014) 868. (IF=1.798)

2013

Y. Kamali, B. R. Walsh, J. Mooney, H. P. T. Nguyen, C. Brosseau, R. Leonelli, Z. Mi, and P. Kambhampat, " Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures", Journal of Applied Physics 114 (2013) 164305. (IF = 2.210)
H. P. T. Nguyen, S. Zhang, A. Connie, Md. Kibria, Q. Wang, I. Shih, and Z. Mi, “Breaking the carrier injection bottleneck of phosphor-free nanowire white light emitting diodes”,  Nano Letter 13 (2013) 5437. (IF = 13.025)
M. G. Kibria, H. P. T. Nguyen, K. Cui, S. Zhao, D. Liu, H. Guo, M. L. Trudeau, S. Paradis, H. Abou-Rachid, and Z. Mi, “One-step overall water splitting under visible light using multi-band InGaN/GaN nanowire heterostructures”, ACS Nano 7 (2013) 7886. (IF = 12.062)
B. AlOtaibi, H. P. T. Nguyen, S. Zhao, M. G. Kibria, S. Fan, and Z. Mi, "Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode", Nano Letters 13 (2013) 4356. (IF = 13.025)
S. Zhang, Y. Li, S. Fathololoumi, H. P. T. Nguyen, Q. Wang, Z. Mi, Q. Li, and G. T. Wang, " On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping", AIP Advances 3 (2013) 082103. (IF = 1.349) 
Q. Wang, A. Connie, H. P. T. Nguyen, M. G. Kibria, S. Zhao, S. Sadaf, and Z. Mi, “High efficiency, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes”, Nanotechnology 24 (2013) 345201. (IF = 3.842) 
S. Zhao, M. G. Kibria, Q. Wang, H. P. T. Nguyen, and Z. Mi, “Growth of large-scale vertically aligned GaN nanowire heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy”, Nanoscale 5 (2013) 5283. (IF = 6.233)
H. P. T. Nguyen, M. Dajvid, and Z. Mi, “Nonradiative recombination mechanism in phosphor-free GaN-based nanowire white light emitting diodes and the effect of ammonium sulfide surface passivation”, ECS Transaction 53 (2013) 93
B. AlOtaibi, M. Harati, S. Fan, S. Zhao, H. P. T. Nguyen, M. G. Kibria, and Z. Mi, “High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode”, Nanotechnology 24 (2013) 175401. (IF = 3.842) 
Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes”, Proc. SPIE, 8634 (2013) 86340B
J. Titus, H. P. T. Nguyen, Z. Mi, and A. G. U. Perera, “Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy”, Applied Physics Letters, 102 (2013) 121901. (IF = 3.794)
V. Cardin, L. I. Dion-Bertrand, P. Gregoire, H. P. T. Nguyen, M. Sakowicz, Z. Mi, C. Silva and R. Leonelli, “Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111)”, Nanotechnology, 24 (2013) 045702. (IF = 3.842) 

2012

A. Shih, S. Fathololoumi, S. Zhao, B. L. Huy, H. P. T. Nguyen, I. Shih, Z. Mi, "Negative differential resistance in GaN/AlN heterostructure nanowires ", International Journal of Theoretical and Applied Nanotechnology, 1 (2012) 105
Q. Wang, H. P. T. Nguyen, K. Cui, and Z. Mi, "High efficiency ultraviolet emission from AlxGa1-xN core-shell nanowire heterostructures grown on Si(111) by molecular beam epitaxy", Applied Physics Letters, 101 (2012) 043115. (IF = 3.794)
H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid and Z. Mi, "Controlling electron overflow in phosphor-free InGaN/GaN nanowire white-light-emitting diodes", Nano Letters, 12 (2012) 1317. (IF = 13.025)
H. P. T. Nguyen, M. Djavid, Kai Cui and Z. Mi, " Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon", Nanotechnology, 23 (2012) 194012. (IF = 3.842) 
H. P. T. Nguyen, S. Zhang, K. Cui and Z. Mi, "High efficiency InGaN/GaN dot-in-a-wire red light emitting diodes", IEEE Photonics Technology Letters, 24 (2012) 321. (IF = 2.038)

2011

S. Fathololoumi, H. P. T. Nguyen, and Z. Mi, "Self-organized In(Ga)N nanowire heterostructures and optoelectronic device applications", Nanoscience & Nanotechnology-Asia, 2 (2011) 123
H. P. T. Nguyen, K. Cui , S. Zhang, Saeed Fathololoumi and Z. Mi, "Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon", Nanotechnology, 22 (2011) 445202. (IF = 3.842) 
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, "p-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111)", Nano Letters, 11 (2011) 1919. (IF = 13.025)
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire white light emitting diodes on Si(111)", ECS Transactions, 35 (2011) 41
H. P. T. Nguyen, Y.-L Chang, I. Shih and Z. Mi, "InN p-i-n nanowire solar cells on Si", IEEE Journal of Selected Topics in Quantum Electronics: Nanowires, 17 (2011) 1062. (IF = 4.078)

2010

Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si", Proc. SPIE 7847, 784702 (2010)

2009

H. P. T. Nguyen , K. H. Kim, H. Lim, and J. J. Lee, "Characteristics of high efficiency InGaP∕InGaAs double junction solar cells grown on GaAs substrates, AIP Conf. Proc., 1169 (2009) 149
E. S. Choi, H. M. Doan, H. P. T. Nguyen , S. Kim, H. Lim, F. Rotermund, and J. J. Lee, "Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes", Journal of Crystal Growth, 311 (2009) 863. (IF = 1.552)

 

3. Conference/Meeting Presentations  

R. Wang, Y. Ra, S. Zhao, X. Liu, H. P. T. Nguyen, I. Shih, and Z. Mi, "Tunable, full-color nanowire light-emitting diode arrays monolithically integrated on Si and sapphire",  SPIE Photonics West 2015, San Francisco, CA, February, 2016

Sharif M. Sadaf1, Yong-Ho Ra1, Hieu P. Nguyen2 and Zetian Mi1, Alternating Current Operated InGaN/GaN Tunnel Junction Nanowire Phosphor-Free White-Light Emitting Diodes, 2015 MRS Fall Meeting& Exhibit, Boston, Massachusetts, November 29 – December 4, 2015
H. P. T Nguyen, M. N. Bhuyian, A. Diop, Y. Evo, R. Rocha, and J. Piao, "Self-organized InGaN/AlGaN superlattice core-shell heterostructures for high power phosphor-free nanowire white light-emitting diodes", the 5th international workshop on nanotechnology and application, Vung Tau, Vietnam, November 11-14, 2015
Invited: H. P. T. Nguyen”III-nitride Nanowire Light-Emitting Diodes”,  Joint Workshop on LEDs for Life Science and Bio-Agriculture 2015, Ho Chi Minh City, Vietnam November 10-11, 2015
R. Wang, Y. Ra, S. Zhao, X. Liu, H. P. T. Nguyen, I. Shih, and Z. Mi, "Tunable, full-color nanowire light-emitting diode arrays on Si and sapphire", International Conference on Nitride Semiconductors, Beijing, China, August 30th - September 4th, 2015
Plenary: H. P. T. Nguyen, Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects”, 227th Electrochemical Society Meeting, Chicago, Illinois, May 24-28, 2015
Ruolin Chen, Guan Sun, Yujie J. Ding, Hieu Nguyen, and Zetian Mi, “Photoluminescence Upconversion Study of GaN Nanowires: Potential for Optical Refrigeration”,  CLEO 2015
S. Sadaf, Y-H. Ra, H. P. T. Nguyen, J. Kang, M. Djavid, and Z. Mi, "InGaN/GaN tunnel junction dot-in-a-wire light-emitting diodes", 2015 MRS Spring Meeting& Exhibit, San Francisco, California, April 6-10, 2015
Invited: H. P. T. Nguyen, “Molecular Beam Epitaxial Growth of Large Area InGaN/GaN Nanowire Solar Cells on Silicon Substrates”, 1st Annual World Congress of Smart Materials, Busan, South Korea, March 23-25, 2015
H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes”, SPIE Photonics West 2014, San Francisco, California, February 7-12, 2015
Invited: Zetian Mi, S. Zhao, H. P. T. Nguyen,B. Le, Q. Wang, and X. Liu, “High Performance III-Nitride Nanowire Light Emitting Diodes from the Deep Ultraviolet to the Near Infrared”, 10th International Symposium on Semiconductors Light Emitting Diodes, Kaohsiung, Taiwan, December 14-19, 2014
R. Cheriton, S. Han, A. Trojnar, A. Connie, H. P. T. Nguyen, Z. Mi, J. J. Krich, K. Hinzer, “Electrical and Optical Characterization of Core-Shell InGaN/GaN Nanowire Solar Cells on Si (111)”, EU PVSEC 2014, Amsterdam, Netherland, September 22-26, 2014
S. Y. Woo, N. Gauquelin, M. Kociak, H. P. T. Nguyen, Z. Mi, G. A. Botton, “Influence of Strain State on the Formation of Short-Period InGaN/GaN Nanowire Superlattice by Electron Energy-Loss Spectroscopy”, 18th International Microscopy Congress, Prague, Czech Republic, September 7-12, 2014
S. Y. Woo, M. Kociak, H. P. T. Nguyen, Z. Mi, G. A. Botton, “Nanoscale Luminescence Mapping of InGaN/GaN Multiple Quantum Dot Doped Nanowire LEDs with Scanning Transmission Electron Microscopy”, 18th International Microscopy Congress, Prague, Czech Republic, September 7-12, 2014
Invited: G. A. Botton, M. Bugnet, K.J. Dudeck, N. Gauquelin, H. Liu, S. Prabhudev, A. Scullion, S. Stambula, S.Y. Woo, G.-Z. Zhu, H. P. T. Nguyen, Z. Mi, “Studying Tomorrow’s Materials Today: Insights with Quantitative STEM, EELS”, 2014 Microscopy and Microanalysis, Hartford, Connecticut, August 3-7, 2014
B. AlOtaibi, S. Fan, H. P. T. Nguyen, S. Zhao, M. G. Kibria, and Z. Mi, " PhotoelectrochemicalWater Splitting and Hydrogen Generation Using InGaN/GaN Nanowire Arrays", 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014
M. G. Kibria, F. A. Chowdhury, H. P. T. Nguyen, S. Zhao, Z. Mi, " Overall Water Splitting under Broadband Light Using InGaN/GaN Nanowire Heterostructures", 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014
S. Zhao, H. P. T. Nguyen, and Z. Mi, "Near-infrared InN nanowire optoelectronic devices on Si", 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014
 H. P. T. Nguyen, R. Wang, A. T. Connie, I. Shih, and Z. Mi, " Color Tunable Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire Light-Emitting Diodes on Silicon",  2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14-16, 2014
A. T. Connie, H. P. T. Nguyen, I. Shih, and Z. Mi, “Investigating the Surface State Effect on Nanowire Solar Cell”, Next Generation Solar, Montreal, Quebec, May 14-16, 2014
Invited: Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, "High Power Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire White Light Emitting Diodes on Si", 225th Electrochemical Society Meeting, Orlando, Florida, May 11-15, 2014
Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, "Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes", SPIE Photonics West 2014, San Francisco, California, February 1-6, 2014
H. P. T. Nguyen, M. G. Kibria,, A. Connie, Q. Wang, I. Shih, and Z. Mi, " High-power Phosphor-free InGaN/GaN/AlGaN Dotin-a-wire Core-shell White Light Emitting Diodes", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013
A.T. Connie, H.P.T. Nguyen, S.M. Sadaf, I. Shih, and Z. Mi, " Engineering the Color Rendering Index of Phosphor-free InGaN/(Al)GaN Nanowire White Light Emitting Diodes Grown by Molecular Beam Epitaxy", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013
B. H. Le, N. H. Tran, H. P. T. Nguyen, and Z. Mi, " InGaN/GaN Dot-in-a-wire Intermediate-band Solar Cell Devices",  30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013
M.G. Kibria, F.A. Chowdhury, S. Zhao, H. P. T. Nguyen, Q. Wang, and Z. Mi, "Band-engineered InGaN Nanowires Arrays for HighEfficiency Water Splitting Under Visible Light Irradiation", 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5-11, 2013
Invited: Z. Mi, and H. P. T. Nguyen, “High-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Materials and Symposium for Efficient Lighting Symposium at the 246th National Meeting of the American Chemical Society, Indianapolis, IN, Sept. 8-13, 2013.
Invited: Z. Mi, H. P. T. Nguyen, S. Zhao, Q. Wang, B. H. Le, and K. H. Li, “High performance III-nitride nanowire LEDs and lasers on Si,” The 16th Canadian Semiconductor Science and Technology Conference, Thunder Bay, ON, Canada, Aug. 12-16, 2013.
B. H. Le, N. H. Tran, S. Arafin, H. P. T. Nguyen, and Z. Mi, "Current-voltage characteristics of single InGaN/GaN nanowire LEDs",  10th International Conference on Nitride Semiconductors, Washington, DC August 25-30, 2013.
H. P. T. Nguyen, Q. Wang, and Z. Mi, "Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates", 55th Electronic Materials Conference, South Bend, Indiana, June 26-28, 2013
S. M. Sadaf, H. P. T. Nguyen, A. Connie, and Z. Mi, "Polarization doped core-shell InGaN-GaN dot-in-a wire white light emitting diodes", 55th Electronic Materials Conference, South Bend, Indiana, June 26-28, 2013
Invited: Z. Mi, S. Zhao, H. P. T. Nguyen, Q. Wang, and M. Djavid, " Ultrahigh Efficiency In(Ga)N Nanowire LEDs and Lasers on a Si Platform", 15th Photonics North Conference, Ottawa, Canada, June 03-05, 2013
B. AlOtaibi, S. Fan, S. Zhao, H. P. T. Nguyen, and Z. Mi, " Stable Photoelectrochemical Water Reduction Using p-GaN Nanowire Photocathode Decorated by Platinum Nanoparticles", 15th Photonics North Conference, Ottawa, Canada, June 03-05, 2013
H. P. T. Nguyen, M. Djavid, and Z. Mi, " Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the Effect of Ammonium Sulfide Surface Passivation", 223th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12-16, 2013
H. P. T. Nguyen, H.-D. Nguyen, S. Mho, and J. J. Lee," Implanted Nano-hole Arrays for the Enhanced Efficiency of III-V Based Solar Cells and Light Emitting Diodes" 223th Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12-16, 2013
Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes”, SPIE Photonics West 2013, San Francisco, California, February 2-7, 2013
M. Harati, B. M. Alotaib, M. G. Kibria, S. Fan, S. Zhao, H. P. T. Nguyen, and Z. Mi, "n-InGaN Nanowire Arrays for Photoelctrochemical Hydrogen Generation", Material Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25 - 30, 2012
S.  Y.  Woo, S. Turner, N.  Gauquelin, H. P. T. Nguyen, Z. Mi, G. A.  Botton, “Effect of Strain Distribution on Indium Incorporation in InGaN/GaN Dot-in-a-wire Nanostructures by Electron Energy-loss Spectroscopy”, Material Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25 - 30, 2012
M.G. Kibria, H. P. T. Nguyen, S. Zhao, and Z. Mi, "Photocatalytic Pure Water Splitting Under Visible Light Using InGaN/GaN Nanowire Heterostructures Grown By Molecular Beam Epitaxy", 29th North American Molecular Beam Epitaxy Conference, Stone Mountain Park, Georgia, October 14-17, 2012
Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, and M. Djavid, "Ultrahigh Efficiency Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes on Silicon", IEEE Photonics Conference (IPC12), Burlingame, California, September 23-27, 2012 
B. AlOtaibi, M. Harati, Md. G. Kibria, S. Fan, H. P. T. Nguyen, S. Zhao, and Z. Mi, "Photoelectrochemical Hydrogen Production Using GaN Nanowire Arrays", Photonics North 2012, Montreal, Quebec, Canada, June 6-8, 2012
H. P. T. Nguyen, Y. Li, K. Cui, and Z. Mi, "AlGaN/GaN Nanowire Deep Ultraviolet Light Emitting Diodes Monolithically Grown on Si(111)", Photonics North 2012, Montreal, Quebec, Canada, June 6-8, 2012
M. Djavid, H. P. T. Nguyen, S. Zhang, K. Cui, and Z. Mi " Reduced Electron Overflow in InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes by Using an Electronically Coupled Quantum Well", Photonics North 2012, Montreal, Quebec, Canada, June 6-8, 2012
H. P. T. Nguyen, Y. Li, I. Shih, and Z. Mi, "InGaN/GaN Nanowires for Next Generation Photovoltaics", Next Generation Solar 2012, Montreal, Quebec, Canada, May 14-15, 2012
M. G. Kibria, Z. Mi, H. P. T. Nguyen, S. Zhao, D. Liu, K. H. Bevan, H. Guo, S. Paradis, A.-R. Hakima, and M. Trudeau, "Harnessing Energy from Sunlight and Water Using III-Nitride Nanowire Arrays", Next Generation Solar 2012, Montreal, Quebec, Canada, May 14-15, 2012
H. P. T. Nguyen, Y. Li, and Z. Mi, "Large Area InGaN/GaN Nanowire Solar Cells on Silicon," CLEO 2012, San Jose, CA, May 6-11, 2012
S. Fathololoumi, S. Zhao, H.P.T. Nguyen, M. Djavid, I. Shih, Z. Mi, "Large Area GaN/AlN Nanowire Resonant Tunneling Devices on Silicon", CLEO 2012, San Jose, CA, May 6-11, 2012
G. Sun, R. Chen, P. Zhao, H. P. T. Nguyen, Z. Mi, and Y. Ding, " Terahertz Generation in InGaN/GaN Dot-in-a-Wire", CLEO 2012, San Jose, CA, May 6-11, 2012
H. D. Nguyen, H. P. T. Nguyen, J. J. Lee, and S. Mho, "Enhanced Efficiency in Single Junction GaAs Solar Cells by Nano-hole Arrays", Expanded US - Vietnam Workshop on Solar Energy Conversion, January 29-31, 2012
H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, R. Wu, and Z. Mi, "High-efficiency phosphor-free InGaN/GaN dot-in-a-wire white-light-emitting diodes on Silicon", SPIE Photonics West 2012, San Francisco, California, Jan. 21-26, 2012
Invited: H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi and Z. Mi, "Study on the Quantum Efficiency Enhancement in InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy", IEEE Photonics Conference (IPC11), Arlington, Virginia, October 9-13, 2011
Invited: Z. Mi, H. P. T. Nguyen, K. Cui, S. Zhang, and S. Fathololoumi, "Ultrahigh-Efficiency Phosphor-Free Nanowire White Light Emitting Diodes Monolithically Grown on Silicon", Canadian Semiconductor Science and Technology Conference, Univ. of British Columbia, Vancouver, Canada, Aug. 15-17, 2011
H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi and Z. Mi, "High efficiency phosphor-free InGaN/GaN white light emitting diodes on Silicon", 28th North American Molecular Beam Epitaxy Conference, La Jolla, CA, August 14-17, 2011
H. P. T. Nguyen, K. Cui, S. Fathololoumi, X. Han, S. Zhao, Z. Mi, Q. Li, G. Wang, K. Bevan, and H. Guo, "On the surface electron accumulation and Fermi-level pinning at InN nonpolar growth surfaces", 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, and Z. Mi," High-Efficiency p-Doped InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes Monolithically Grown on Si(111)," 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10-15, 2011
H. P. T. Nguyen, K. Cui, S. Zhang, X. Han, and Z. Mi, "InGaN/GaN dot-in-a-wire nanoscale heterostructures and high-efficiency light emitting diodes on Si", 5th International Conference on Nanophotonics, Sanghai, China, May 22-26, 2011.
Invited: Z. Mi, H. P. T. Nguyen, K. Cui, Md G. Kibria, D. Wang, and I. Shih, "Harvesting Solar Energy Using Group III-Nitride Nanowires", Photovoltaics Canada-2nd National Scientific Conference, Ottawa, Canada, May 16 –18, 2011
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111) Substrate", the Conference on Lasers and Electro-Optics 2011, Baltimore Convention Center, Baltimore, Maryland, USA, May 1-6, 2011
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, "Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)," 219th Electrochemical Society Meeting, Montreal, Canada, May 1-6, 2011
P. Bianucci, K. Cui, H. P. T. Nguyen and Z. Mi, "Nanoscale infrared sources for spectroscopic analysis of water content in wood fibre networks", Innovative Green Fiber Products Network 1st Annual Meeting, Montreal, Quebec, Canada, February, 2011
Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, and K. Cui, "High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111)," IEEE Photonics Society Winter Topical Meeting 2011, Keystone, CO, Jan. 10-12, 2011
Invited: Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, "Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si," SPIE/COS Photonics Asia, Beijing, China, Oct. 18-20, 2010
Y. L. Chang, F. Li, J. Wang, H. P. T. Nguyen, Z. Mi, "Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires", Electronic Materials Conference, Notre Dame, Indiana, US, June 23-25, 2010
H. P. T. Nguyen, S. Park, Y. L. Chang, J. L. Wang, I. Shih, and Z. Mi, "Low Cost and High Performance In(Ga)N/CuInSe2 Heterojunction Solar Cells", Photonics North 2010 collocated with Photovoltaics Canada-1st  National Scientific Conference, Niagara Falls, ON, Canada, June 1 – 3, 2010
Y. L. Chang, H. P. T. Nguyen, I. Shih, and Z. Mi, "Vertically aligned InN p-i-n nanowire solar cells on Si", Photonics North 2010 collocated with Photovoltaics Canada-1st National Scientific Conference, Niagara Falls, ON, Canada, June 1 – 3, 2010
H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, "Conversion efficiency enhanced by lowering bandgap energy of bottom cell in InGaP/InGaAs double junction solar cells", International Workshop on Nanotechnology and Application, VungTau, Vietnam, November 12-14, 2009
H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, "Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates", International Workshop on Advanced Material for New and Renewable Energy, Indonesia, June 9-11, 2009, Jakarta
H. P. T. Nguyen, and J. J. Lee, "Enhancing solar cell conversion efficiency by roughening surface", 3rd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications, Ajou University, Korea, February 16-17, 2009
E. S. Choi, H. P. T. Nguyen, H. M. Doan, S. Kim, H. Lim, F. Rotermund, and J. J. Lee, "Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes", The 4th Asian Conference on Crystal Growth and Crystal Technology, Sendai, Japan, May 21-24, 2008
H. P. T. Nguyen, H. M. Doan, and J. J. Lee, "High efficiency III-V solar cell", 2nd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications,  Yongin-Si, Korea, January 30-31, 2008
E. S. Choi, H. P. T. Nguyen, H. M. Doan, S. Kim, F. Rotermund, H. Lim, and J. J. Lee, "Enhanced cathode luminescence in InxGa1-xN/InyGa1-yN green light emitting diode structure using two-dimensional photonic crystal", International Workshop on Nanotechnology and Application, Vungtau, Vietnam, November 15 –17, 2007
E. S. Choi, H. P. T. Nguyen, and J. J. Lee, "Enhanced cathode luminescence using a photonic crystal in InGaN/GaN green LED structure", 1st Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications, Suwon, Korea, February 1-2, 2007

5. Patents

Z. Mi, H. P. T. Nguyen, and K. Cui, "High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis", US 2012/0205613