Leonid Tsybeskov
New Jersey Institute of Technology
Date: Thursday, April 1, 2004
Time: 4:45 pm (Pizza & Soda: 4:45 PM)
Place: 202 ECEC, NJIT

ABSTRACT

This presentation is mainly focused on two major problems with device quality SiGe nanostructures: lattice mismatch and type-two band alignment. I will discuss several possible solutions and new avenues in SiGe research and device development.

ABOUT THE SPEAKER

Leonid Tsybeskov received his MS in Physics in 1978 and Ph.D. in Applied Physics in 1986 from Odessa University, Odessa, Ukraine (former USSR). From 1986 to 1991 he was with Physics Research Institute in Odessa,Ukraine. From 1991 to 2001 he was a post-doctoral research associate, visiting scientist, visiting research professor, assistant research professor and director of Nanoscale Silicon Research Initiative at University of Rochester, Rochester, NY. In 1999 he was on leave with Technical University of Munich, Germany. In 2001 he moved to NJIT where he is an associate professor at ECE Department. He has received DAAD (German Academic Exchange Service) research fellowship in 1999. He is American Physical Society Fellow (elected in 2002).

His research is focused on group IV (Si, Ge, SiGe, SiCGe) semiconductor nanostructures. He is author and co-author of more than 100 papers, two books and many book chapters.

Information: Prof. H. Grebel (973) 596-3538, grebel@njit.edu